Dr. Bertrand Bocquet, IEMN-Lille, France

THz BioMEMS for Biological investigation: technology and measurements

Dr. Philippe Bove, Picogiga International, France

Status and Future of the on Composite Substrates developed within the HYPHEN EU project

Dr. Antonio Cetronio, Selex Sistemi Integrati, Roma, Italy

"GaN-HEMT MMICs: Harnessing of a New Enabling Technology for Next Generation

Systems Applications"

Dr. M. Germain, IMEC, Belgium

III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates

Dr. Franco Giannini, University of Rome, Tor Vergata, Italy

New Methodologies for GaN power amplifiers design.

Dr. Berthold Hahn, OSRAM Opto-Semiconductors, Regensburg, Germany

Recent advances in GaNIn LEDs

Dr. Adrian Hierro, Universidad Politecnica de Madrid – ISOM, Spain

Diluted Nitrides for IR lasing applications

Prof. D. Lippens and Prof. S. Tretyakov,  IEMN, Lille, France, TKK, Helsinki, Finland

Emerging metamaterial technology: the METAMORPHOSE network of excellence

Dr. Gottfried Magerl, TU Wien, Austria – NoE “TARGET”

Review of the achievements within the TARGET Network of Excellence (issues within RF power amplifiers)

Dr. H. Lüth and M. Mikulic, Forschungszentrum Juelich, GmbH, Germany

Novel Efficient Metal-Semiconductor-Metal Photomixers

Dr. Shigeru Nakajima - Eudyna Devices Inc.

"State of the art performance for High Power & High Efficiency GaN HEMTs: a Japanese perspective"

Prof. Taiichi Otsuji, Dr. Eng., Tohoku University - Japan

Stimulated emission of terahertz radiation from a plasmon-resonant photomixer fabricated with GaAs-based heterostructure material systems

Dr. Edwin L. Piner - Nitronex Corporation

“Progress in GaN electronic devices and timeline for the completion of the overriding vision of GaN electronics: An USA perspective”

Dr. Ruediger Quay, Fraunhofer Institute of Applied Solid-State Physics (IAF), Germany

GaN HEMT: Trends in civil and military circuit applications

Dwight Streit, Northrup Grumman Space Technology

InP MMICs for Radiometer Applications

Dr. Daisuke Ueda, Dr. Masaaki Yuri, Matsushita Electric Industrial Co. Ltd., Japan

GaN-based Lasers for next-generation Blue Ray systems

Dr. J. M. Xu, Brown University, RI, USA

Arrayed Carbon Nanotubes for Uncooled IR Sensors