Important deadlines

PROGRAM

The conference main objective is to bring together scientists and engineers working in the field of emerging technologies for high speed and low noise applications such as III-V compound semiconductor devices and integrated circuits for microwave, mm-wave, and optoelectronic applications. Special effort is devoted, in the last years, to wide-bandgap based devices (GaN and SiC). These very promising devices can have a large impact in the high power, high temperature and high frequency applications. The main goal of this conference is to present the state of the art of these advanced compound semiconductor devices and promote discussion on their technological aspects and performances.

 

 The topics that will be covered by the conference are:

 

• Wide bandgap Devices

• Transistor Structures Using composite materials

• MW and MM-Wave Integrated Circuits

• Device and MMIC Reliability

• Noise and Power Characteristics of Devices and Circuits

• Terahertz Technology

• Optoelectronic Devices and their Integration

• Novel Structures and Concepts

• Modeling and Simulation

• Technology of Devices and MMICs

• Material Growth, processing and Characterization

• RF and power devices

• Characterization of GaAs and InP-based HEMTs

• Heterojunction Bipolar Transistors
• MMIC and Advanced Circuits
• New Materials
• Device and Material characterization
• Lasers
• GaN-based devices
• SiC-based devices

 

 

 

All the submitted extended abstract will be collected in a Booklet (WOCSDICE 2007 conference proceedings).

 

 

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