This workshop will start with two talks that will give the view of the GaN development in Japan (Dr. Shigeru Nakajima - Eudyna Devices Inc.) and in USA (Dr. Edwin L. Piner - Nitronex Corporation). These talks will give an overview of the the significant progress that has been made in the GaN electronic devices in the past years. It will also be discussed the timeline for the completion of the overriding vision of GaN electronics as well as the products line-ups of GaN HEMTs for the infrastructure markets.

Then Philippe Bove (Picogiga) will give an overview of the “HYPHEN” EU Strep project (http://www.hyphen-eu.com/) that is dealing with the development and evaluation a new type of composite substrate based on Silicon and Silicon Carbide materials, able to provide a cost efficient solution that will leverage the use of advanced high power devices in wireless communication systems.

Finally representative of industry and institution among the main GaN- player in Europe will give an overview of the GaN advancement technology in Europe: Dr. Andrew Barnes (ESA Estec – NL) and Marianne GERMAIN (IMEC – NL).

WOGATE PROGRAMME

Dr. Shigeru Nakajima - Eudyna Devices Inc.

"State of the art performance for High Power & High Efficiency GaN HEMTs: a Japanese perspective".

Dr. Edwin L. Piner - Nitronex Corporation

“Progress in GaN electronic devices and timeline for the completion of the overriding vision of GaN electronics: An USA perspective”

Dr. Philippe Bove (Picogiga): The EU “Hyphen” Strep  Project;

GaN Advancement Technology in Europe:

- Dr. Andrew Barnes (ESA Estec – NL)

- Dr. Antonio Cetronio (Selex-SI, I)

- Dr. Ruediger Quay (IAF - D)

- Dr. Marianne GERMAIN (IMEC – NL)

Other speakers are going to be confirmed.